1998. 6. 15 1/3 semiconductor technical data KTA1666 epitaxial planar pnp transistor revision no : 2 power amplifier applications. power switching applications. features low saturation voltage : v ce(sat) =-0.5v(max.) (i c =-1a) high speed switching time : t stg =1.0 s(typ.) p c =1 2w (mounted on ceramic substrate) small flat package. complementary to ktc4379. maximum rating (ta=25 1 ) dim a b d e g h k 4.70 max 2.50 0.20 1.70 max 0.45+0.15/-0.10 4.25 max 1.50 0.10 0.40 typ 1.75 max 0.75 min 0.5+0.10/-0.05 sot-89 c j g d 123 2. collector (heat sink) a c k j f millimeters h 1. base 3. emitter b e ff d + _ + _ electrical characteristics (ta=25 1 ) note 1 : pulse width # 300 s, duty cycle # 2% note 2 : h fe (1) classification 0:70 140, y:120 240 p c * : KTA1666 mounted on ceramic substrate (250mm 2 x0.8t) w type name h rank fe lot no. marking characteristic symbol test condition min. typ. max. unit collector cut-off current i cbo v cb =-50v, i e =0 - - -0.1 a emitter cut-off current i ebo v eb =-5v, i c =0 - - -0.1 a collector-emitter breakdown voltage v (br)ceo i c =-10ma, i b =0 -50 - - v dc current gain h fe (1) (note2) v ce =-2v, i c =-0.5a (note 1) 70 - 240 h fe (2) v ce =-2v, i c =-1.5a (note 1) 40 - - collector-emitter saturation voltage v ce(sat) i c =-1a, i b =-0.05a (note 1) - - -0.5 v base-emitter saturation voltage v be(sat) i c =-1a, i b =-0.05a (note 1) - - -1.2 v transition frequency f t v ce =-2v, i c =-0.5a - 120 - mhz collector output capacitance c ob v cb =-10v, i e =0, f=1mhz - 40 - pf switching time turn-on time t on i b1 30? b1 i cc v =-30v i b2 i b2 20 sec -i =i =0.05a 1% b1 b2 output duty cycle input 0 < = - 0.1 - s storage time t stg - 1.0 - fall time t f - 0.1 - characteristic symbol rating unit collector-base voltage v cbo -50 v collector-emitter voltage v ceo -50 v emitter-base voltage v ebo -5 v collector current i c -2 a base current i b -0.4 a collector power dissipation p c 500 mw p c * 1 w junction temperature t j 150 1 storage temperature range t stg -55 150 1
1998. 6. 15 2/3 KTA1666 revision no : 2 ce v (v) collector-emitter voltage collector current i (a) c c ce v - i v - i c collector current i (ma) collector-emitter saturation collector-emitter voltage v (v) collector cuirrent i (a) -0.4 ce 0 c 0 v - i ce c -0.4 -0.8 -1.2 -1.6 -2.0 -0.8 -1.2 -1.6 -0.4 collector cuirrent i (a) collector-emitter voltage 0 0 -1.6 -1.2 -0.8 -0.4 v (v) ce -1.6 -0.8 -1.2 c -2.0 v - i ce c i =-5ma b -10 -2 0 -30 - 40 common emitter ta=25 c i = - 3 ma b -5 -10 -20 -30 -40 -50 common emitter ta=100 c -0.4 0 0 -1.6 -1.2 -0.8 -0.4 common emitter -1.6 -0.8 -1.2 i =-5ma b -10 ta=-55 c -2.0 - 30 -20 -4 0 -50 collector current i (ma) dc current gain h -10 -30 10 fe -300 -100 c h - i fe c -1k -3k 30 50 100 300 500 1k common emitter v =-2v ce ta=100 c ta=25 c ta=-55 c ce(sat) c voltage v (v) ce(sat) -0.3 -1k ta=25 c ta=-55 c -0.1 -0.05 -0.03 -0.01 -10 -30 -100 -300 -3k common emitter ta=100 c -0.5 -1 i /i =20 c b collector current i (ma) base-emitter saturation voltage v (v) -0.1 -0.3 -0.5 -10 -30 -10 -1 -3 -5 be(sat) ta=100 c -1k ta=-55 c -100 -300 c ta=25 c -3k common emitter be(sat) v - i i /i =20 cb c
1998. 6. 15 3/3 KTA1666 revision no : 1 collector current i (ma) c -1 -3 -1 -0.3 -0.1 collector-emitter voltage v (v) ce safe operating area collector current i (a) 0 -0.4 base-emitter voltage v (v) be 0 i - v cbe c -0.4 -0.8 -1.2 -1.6 -2.0 -2.4 -0.8 -1.2 -1.6 -2.0 ta=100 c ta=25 c ta=-55 c -10 -30 -100 -3 -5 -10 -30 -50 -100 -300 -500 -1k -3k -5k single nonrepetitive pulse ta=25 c curves must be derated linearly with increase in temperature i max(pulse) i max(conti- nuous) c c dc o p eratio n 1s 100ms 10ms 1m s v max ceo common emitter v =-2v ce collector power dissipation p (w) c 0.2 20 0 ambient temperature ta ( c) pc - ta 40 60 80 100 120 140 160 0 0.4 0.6 0.8 1.0 1.2 1 mounted on ceramic substrate(250mm x0.8t) 2 ta=25 c 2 1 2
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